Positron-annihilation study of compensation defects in InP

IMR OpenIR

	Positron-annihilation study of compensation defects in InP
	Shan, YY ; Deng, AH ; Ling, CC ; Fung, S ; Ling, CD ; Zhao, YW ; Sun, TN ; Sun, NF
通讯作者	Shan, YY()
	2002-02-15
发表期刊	JOURNAL OF APPLIED PHYSICS
ISSN	0021-8979
卷号	91 期号:4 页码:1998-2001
摘要	Positron-annihilation lifetime and positron-annihilation Doppler-broadening (PADB) spectroscopies have been employed to investigate the formation of vacancy-type compensation defects in n-type undoped liquid encapsulated Czochrolski grown InP, which undergoes conduction-type conversions under high temperature annealing. N-type InP becomes p-type semiconducting by short time annealing at 700 degreesC, and then turns into n-type again after further annealing but with a much higher resistivity. Long time annealing at 950 degreesC makes the material semi-insulating. Positron lifetime measurements show that the positron average lifetime tau(av) increases from 245 ps to a higher value of 247 ps for the first n-type to p-type conversion and decreases to 240 ps for the ensuing p-type to n-type conversion. The value of tau(av) increases slightly to 242 ps upon further annealing and attains a value of 250 ps under 90 h annealing at 950 degreesC. These results together with those of PADB measurements are explained by the model proposed in our previous study. The correlation between the characteristics of positron annihilation and the conversions of conduction type indicates that the formation of vacancy-type defects and the progressive variation of their concentrations during annealing are related to the electrical properties of the bulk InP material. (C) 2002 American Institute of Physics.
收录类别	SCI
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000173553800036
出版者	AMER INST PHYSICS
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/114066
专题	中国科学院金属研究所
通讯作者	Shan, YY
作者单位	1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Sichuan Univ, Dept Appl Phys, Sichuan, Peoples R China 3.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 4.Hebei Semicond Res Inst, Shijiazhuang, Peoples R China
推荐引用方式 GB/T 7714	Shan, YY,Deng, AH,Ling, CC,et al. Positron-annihilation study of compensation defects in InP[J]. JOURNAL OF APPLIED PHYSICS,2002,91(4):1998-2001.
APA	Shan, YY.,Deng, AH.,Ling, CC.,Fung, S.,Ling, CD.,...&Sun, NF.(2002).Positron-annihilation study of compensation defects in InP.JOURNAL OF APPLIED PHYSICS,91(4),1998-2001.
MLA	Shan, YY,et al."Positron-annihilation study of compensation defects in InP".JOURNAL OF APPLIED PHYSICS 91.4(2002):1998-2001.