Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure

doi:10.1007/s11664-020-08372-8

IMR OpenIR

	Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure
	Gao, Li-Yin 1,2; Cui, Xian-Wei 3; Tian, Fei-Fei 4; Liu, Zhi-Quan 1,2
通讯作者	Liu, Zhi-Quan(zqliu@siat.ac.cn)
	2020-08-13
发表期刊	JOURNAL OF ELECTRONIC MATERIALS
ISSN	0361-5235
页码	9
摘要	In this study, the influence of different reflow profiles and dosages of SnPb solder paste on the reliability of the SnAgCu/SnPb mixed assembly process was investigated. The interfacial microstructures were carefully examined through scanning electron microscopy, and two failures modes were found. Firstly, when reflowed at 245 degrees C for 95 s, Pb-rich phases were buried within an intermetallic compound (IMC) layer and led to micro-voids and cracks under thermal stress or mechanical stress. However, upon increasing the reflow temperature or time further led to melting the solder ball totally, and the Pb element dissolved into a liquid phase and precipitated into uniform and small granules during the cooling process. Further, among the samples with different dosages of SnPb solder paste, severe shrinkage occurred at the solder joints with the addition of 12 wt.% eutectic SnPb component. Electron back-scattered diffraction analysis was conducted in order to determine the mechanism of different shrinkages. The solder ball consisted of several primary Sn grains, and the shrinkage and Pb-rich phase are preferred to appear at the grain boundary. When the solder ball consisted of a single grain, no preferred orientation of the shrinkage and Pb-rich phase were detected. The shrinkage appeared at the final solidification region, which is near the IMC layer. Moreover, the shrinkages connect to each other, and a continuous crack formed on the chip side, leading to the failure.
关键词	Mixed soldering ball grid array solidification crack shrinkage failure mechanism
资助者	NaUNCORRECTED tional Key R&D Program of China
DOI	10.1007/s11664-020-08372-8
收录类别	SCI
语种	英语
资助项目	NaUNCORRECTED tional Key R&D Program of China[2017YFB0305700]
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号	WOS:000559506500003
出版者	SPRINGER
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/140226
专题	中国科学院金属研究所
通讯作者	Liu, Zhi-Quan
作者单位	1.Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 3.Jiangyin Changdian Adv Packaging Co Ltd, Jiangyin 214431, Peoples R China 4.Nanjing Elect Devices Inst, Nanjing 210016, Peoples R China
推荐引用方式 GB/T 7714	Gao, Li-Yin,Cui, Xian-Wei,Tian, Fei-Fei,et al. Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure[J]. JOURNAL OF ELECTRONIC MATERIALS,2020:9.
APA	Gao, Li-Yin,Cui, Xian-Wei,Tian, Fei-Fei,&Liu, Zhi-Quan.(2020).Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure.JOURNAL OF ELECTRONIC MATERIALS,9.
MLA	Gao, Li-Yin,et al."Failure Mechanism of the SnAgCu/SnPb Mixed Soldering Process in a Ball Grid Array Structure".JOURNAL OF ELECTRONIC MATERIALS (2020):9.