Fabrication of high-conductivity RGO film at a temperature lower than 1500 degrees C by electrical current

doi:10.1007/s10854-021-05797-7

IMR OpenIR

	Fabrication of high-conductivity RGO film at a temperature lower than 1500 degrees C by electrical current
	Lv, Meijuan 1,2; Wei, Qinwei 1,2; Cao, Shuo 1,2; Guo, Jingdong 1,2; Ren, Wencai 1,2; Cheng, Huiming 1,2
通讯作者	Guo, Jingdong(jdguo@imr.ac.cn)
	2021-04-10
发表期刊	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN	0957-4522
页码	10
摘要	Fabricating conductive graphene films by assembling graphene oxide (GO) sheets is highly desired for many applications, however a very high temperature around 3000 K is usually required to repair the sp(2) structure for traditional thermal annealing. Here, an electric field assisted Joule heating method was developed to repair the sp(2) structure in GO at a temperature lower than 1500 degrees C. The resulting free-standing graphene film shows a high electrical conductivity (similar to 1840 S/cm) and high C/O ratio (132), both of which are much higher than those of thermally reduced GO films under the same temperature. These findings provide new possibilities for fabricating high-quality graphene films in an energy-efficient and low-cost manner.
资助者	National Key R&D Program of China ; National Natural Science Foundation of China
DOI	10.1007/s10854-021-05797-7
收录类别	SCI
语种	英语
资助项目	National Key R&D Program of China[2020YFA0714900] ; National Natural Science Foundation of China[51971231]
WOS研究方向	Engineering ; Materials Science ; Physics
WOS类目	Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS记录号	WOS:000638869700006
出版者	SPRINGER
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/162474
专题	中国科学院金属研究所
通讯作者	Guo, Jingdong
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, Shenyang 110016, Peoples R China
推荐引用方式 GB/T 7714	Lv, Meijuan,Wei, Qinwei,Cao, Shuo,et al. Fabrication of high-conductivity RGO film at a temperature lower than 1500 degrees C by electrical current[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2021:10.
APA	Lv, Meijuan,Wei, Qinwei,Cao, Shuo,Guo, Jingdong,Ren, Wencai,&Cheng, Huiming.(2021).Fabrication of high-conductivity RGO film at a temperature lower than 1500 degrees C by electrical current.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,10.
MLA	Lv, Meijuan,et al."Fabrication of high-conductivity RGO film at a temperature lower than 1500 degrees C by electrical current".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS (2021):10.