IMR OpenIR
Effect of leveler on performance and reliability of copper pillar bumps in wafer electroplating under large current density
Zhu, Qing-Sheng1; Ding, Zi-Feng1; Wei, Xiang-Fu1; Guo, Jing-dong1; Wang, Xiao-Jing2
Corresponding AuthorZhu, Qing-Sheng(qszhu@imr.ac.cn)
2023-07-01
Source PublicationMICROELECTRONICS RELIABILITY
ISSN0026-2714
Volume146Pages:8
AbstractThis work investigated the effects of levelers on the electroplating performance and reliability of copper pillar bumps (CPBs) on wafer. Under large current density, the usage of Janus green B (JGB) or a commercial leveler (L1) could obtain a satisfied performance in flatness, co-planarity and growth rate. It was found that this qualified leveler possessed a remarkable electrochemical characteristic, i.e., strong convection dependent adsorption (CDA). The void growth at the plated CPBs/Sn-Ag soldering interface during thermal aging was greatly accelerated when the leveler was applied during electroplating. The mass spectrum analysis showed that the level of impurities in the plated CPBs using JGB was much higher than that plated without JGB. The usage of leveler could produce a high level of impurities in the plated CPBs, which accounted for the boosting of voids at the soldering interface during thermal aging.
KeywordCopper pillar bump Cu electroplating Leveler Interfacial voids Chip packaging
Funding OrganizationScience and Technology Plan Project of Yunnan province ; National Natural Science Foundation of China (NSFC)
DOI10.1016/j.microrel.2023.115030
Indexed BySCI
Language英语
Funding ProjectScience and Technology Plan Project of Yunnan province[202101BC070001- 007] ; National Natural Science Foundation of China (NSFC)[51471180] ; National Natural Science Foundation of China (NSFC)[51971231]
WOS Research AreaEngineering ; Science & Technology - Other Topics ; Physics
WOS SubjectEngineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied
WOS IDWOS:001007122600001
PublisherPERGAMON-ELSEVIER SCIENCE LTD
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/178175
Collection中国科学院金属研究所
Corresponding AuthorZhu, Qing-Sheng
Affiliation1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
2.Jiangsu Univ Sci & Technol, Coll Mat Sci & Engn, Zhenjiang 212001, Peoples R China
Recommended Citation
GB/T 7714
Zhu, Qing-Sheng,Ding, Zi-Feng,Wei, Xiang-Fu,et al. Effect of leveler on performance and reliability of copper pillar bumps in wafer electroplating under large current density[J]. MICROELECTRONICS RELIABILITY,2023,146:8.
APA Zhu, Qing-Sheng,Ding, Zi-Feng,Wei, Xiang-Fu,Guo, Jing-dong,&Wang, Xiao-Jing.(2023).Effect of leveler on performance and reliability of copper pillar bumps in wafer electroplating under large current density.MICROELECTRONICS RELIABILITY,146,8.
MLA Zhu, Qing-Sheng,et al."Effect of leveler on performance and reliability of copper pillar bumps in wafer electroplating under large current density".MICROELECTRONICS RELIABILITY 146(2023):8.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Zhu, Qing-Sheng]'s Articles
[Ding, Zi-Feng]'s Articles
[Wei, Xiang-Fu]'s Articles
Baidu academic
Similar articles in Baidu academic
[Zhu, Qing-Sheng]'s Articles
[Ding, Zi-Feng]'s Articles
[Wei, Xiang-Fu]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Zhu, Qing-Sheng]'s Articles
[Ding, Zi-Feng]'s Articles
[Wei, Xiang-Fu]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.