Effect of leveler on performance and reliability of copper pillar bumps in wafer electroplating under large current density

doi:10.1016/j.microrel.2023.115030

IMR OpenIR

	Effect of leveler on performance and reliability of copper pillar bumps in wafer electroplating under large current density
	Zhu, Qing-Sheng 1; Ding, Zi-Feng 1; Wei, Xiang-Fu 1; Guo, Jing-dong 1; Wang, Xiao-Jing 2
通讯作者	Zhu, Qing-Sheng(qszhu@imr.ac.cn)
	2023-07-01
发表期刊	MICROELECTRONICS RELIABILITY
ISSN	0026-2714
卷号	146 页码:8
摘要	This work investigated the effects of levelers on the electroplating performance and reliability of copper pillar bumps (CPBs) on wafer. Under large current density, the usage of Janus green B (JGB) or a commercial leveler (L1) could obtain a satisfied performance in flatness, co-planarity and growth rate. It was found that this qualified leveler possessed a remarkable electrochemical characteristic, i.e., strong convection dependent adsorption (CDA). The void growth at the plated CPBs/Sn-Ag soldering interface during thermal aging was greatly accelerated when the leveler was applied during electroplating. The mass spectrum analysis showed that the level of impurities in the plated CPBs using JGB was much higher than that plated without JGB. The usage of leveler could produce a high level of impurities in the plated CPBs, which accounted for the boosting of voids at the soldering interface during thermal aging.
关键词	Copper pillar bump Cu electroplating Leveler Interfacial voids Chip packaging
资助者	Science and Technology Plan Project of Yunnan province ; National Natural Science Foundation of China (NSFC)
DOI	10.1016/j.microrel.2023.115030
收录类别	SCI
语种	英语
资助项目	Science and Technology Plan Project of Yunnan province[202101BC070001- 007] ; National Natural Science Foundation of China (NSFC)[51471180] ; National Natural Science Foundation of China (NSFC)[51971231]
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied
WOS记录号	WOS:001007122600001
出版者	PERGAMON-ELSEVIER SCIENCE LTD
引用统计	被引频次：6[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/178175
专题	中国科学院金属研究所
通讯作者	Zhu, Qing-Sheng
作者单位	1.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 2.Jiangsu Univ Sci & Technol, Coll Mat Sci & Engn, Zhenjiang 212001, Peoples R China
推荐引用方式 GB/T 7714	Zhu, Qing-Sheng,Ding, Zi-Feng,Wei, Xiang-Fu,et al. Effect of leveler on performance and reliability of copper pillar bumps in wafer electroplating under large current density[J]. MICROELECTRONICS RELIABILITY,2023,146:8.
APA	Zhu, Qing-Sheng,Ding, Zi-Feng,Wei, Xiang-Fu,Guo, Jing-dong,&Wang, Xiao-Jing.(2023).Effect of leveler on performance and reliability of copper pillar bumps in wafer electroplating under large current density.MICROELECTRONICS RELIABILITY,146,8.
MLA	Zhu, Qing-Sheng,et al."Effect of leveler on performance and reliability of copper pillar bumps in wafer electroplating under large current density".MICROELECTRONICS RELIABILITY 146(2023):8.