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Tunable thermal properties in yttrium silicates switched by anharmonicity of low-frequency phonons 期刊论文
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2018, 卷号: 38, 期号: 4, 页码: 2043-2052
作者:  Luo, YX;  Sun, LC;  Wang, JM;  Tian, ZL;  Nian, HQ;  Wang, JY;  Wang, JY (reprint author), Chinese Acad Sci, Inst Met Res, High Performance Ceram Div, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
收藏  |  浏览/下载：136/0  |  提交时间：2018/06/05
Environmental Barrier Coatings  Molten-salt Corrosion  Functional Perturbation-theory  Silicon-nitride  Si3n4 Ceramics  Expansion  Conductivity  Y2sio5  Gamma-y2si2o7  Composites  
Carbon nitride modified nanocarbon materials as efficient non-metallic catalysts for alkane dehydrogenation 期刊论文
CATALYSIS TODAY, 2018, 卷号: 301, 页码: 48-54
作者:  Shi, L;  Qi, W;  Liu, W;  Yan, PQ;  Li, F;  Sun, JM;  Su, DS;  Su, DS (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110000, Liaoning, Peoples R China.;  Sun, JM (reprint author), Harbin Inst Technol, State Key Lab Urban Water Resource & Environm, Harbin 150080, Heilongjiang, Peoples R China.
收藏  |  浏览/下载：120/0  |  提交时间：2018/06/05
Steam-free Dehydrogenation  Oxygen Reduction Reaction  Oxidative Dehydrogenation  Active-sites  In-situ  Ethylbenzene Dehydrogenation  Electrocatalytic Activity  Energy-conversion  Styrene Synthesis  Nitrogen  
Theoretical Study on the Relationship Between Crystal Chemistry and Properties of Quaternary Y-Si-O-N Oxynitrides 期刊论文
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2016, 卷号: 99, 期号: 7, 页码: 2442-2450
作者:  Sun, LC;  Liu, B;  Wang, JM;  Li, Z;  Wang, JY;  Wang, JY (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, High Performance Ceram Div, Shenyang 110016, Peoples R China.
收藏  |  浏览/下载：110/0  |  提交时间：2016/12/28
Oxynitride  First-principles Calculation  Mechanical Property  Thermal Conductivity  
Changing the size and shape of Ge island by chemical etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 1-2, 页码: 17-21
作者:  Gao, F;  Huang, CJ;  Huang, DD;  Li, JP;  Sun, DZ;  Kong, MY;  Zeng, YP;  Li, JM;  Lin, LY
收藏  |  浏览/下载：90/0  |  提交时间：2021/02/02
atomic force microscopy  etching  nanostructures  molecular beam epitaxy  semiconducting germanium  semiconducting silicon  
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 页码: 766-769
作者:  Gao, F;  Lin, YX;  Huang, DD;  Li, JP;  Sun, DZ;  Kong, MY;  Zeng, YP;  Li, JM;  Lin, LY
收藏  |  浏览/下载：73/0  |  提交时间：2021/02/02
annealing  molecular beam epitaxy  germanium silicon alloys  semiconducting materials  
Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 223, 期号: 4, 页码: 489-493
作者:  Gao, F;  Huang, DD;  Li, JP;  Kong, MY;  Sun, DZ;  Li, JM;  Zeng, YP;  Lin, LY
收藏  |  浏览/下载：88/0  |  提交时间：2021/02/02
molecular beam epitaxy  semiconducting gegermanium  semiconducting silicon  bipolar transistors  heterojunction semiconductor devices  
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 461-465
作者:  Gao, F;  Huang, DD;  Li, JP;  Lin, YX;  Kong, MY;  Sun, DZ;  Li, JM;  Lin, LY
收藏  |  浏览/下载：72/0  |  提交时间：2021/02/02
Si growth rate  P doping  PH3 flow rate  P segregation  GSMBE  
Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 220, 期号: 4, 页码: 461-465
作者:  Gao, F;  Huang, DD;  Li, JP;  Lin, YX;  Kong, MY;  Sun, DZ;  Li, JM;  Lin, LY
收藏  |  浏览/下载：66/0  |  提交时间：2021/02/02
Si growth rate  P doping  PH3 flow rate  P segregation  GSMBE  
紫外光和可见光吸收光谱法 期刊论文
光谱实验室, 1988, 期号: 4, 页码: 113-138
作者:  J.A.豪厄尔;  L.G.哈吉斯;  黄鑫泉;  禹济民;  经幼苹;  孙若诚;  肖国壮
收藏  |  浏览/下载：129/0  |  提交时间：2012/04/12
可见光吸收光谱:4224  纳米:4184  分光光度法测定:3875  三元配合物:3408  紫外光谱:2930  吸光度:2794  分光光度计:2577  同时测定:2353  紫外吸收:2222  二极管阵列检测器:2118