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Behavioural investigation of InN nanodots by surface topographies and phase images 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 44, 页码: 6
作者:  Deng, Qingwen;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yin, Haibo;  Chen, Hong;  Lin, Defeng;  Li, Jinmin;  Wang, Zhanguo;  Hou, Xun
收藏  |  浏览/下载：99/0  |  提交时间：2021/02/02
Behavioural investigation of InN nanodots by surface topographies and phase images 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 44, 页码: 6
作者:  Deng, Qingwen;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yin, Haibo;  Chen, Hong;  Lin, Defeng;  Li, Jinmin;  Wang, Zhanguo;  Hou, Xun
收藏  |  浏览/下载：109/0  |  提交时间：2021/02/02
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 34, 页码: 5
作者:  Deng, Qingwen;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yin, Haibo;  Chen, Hong;  Lin, Defeng;  Jiang, Lijuan;  Feng, Chun;  Li, Jinmin;  Wang, Zhanguo;  Hou, Xun
收藏  |  浏览/下载：126/0  |  提交时间：2021/02/02
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 34, 页码: 5
作者:  Deng, Qingwen;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yin, Haibo;  Chen, Hong;  Lin, Defeng;  Jiang, Lijuan;  Feng, Chun;  Li, Jinmin;  Wang, Zhanguo;  Hou, Xun
收藏  |  浏览/下载：101/0  |  提交时间：2021/02/02
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Wang, Zhanguo
收藏  |  浏览/下载：87/0  |  提交时间：2021/02/02
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Wang, Zhanguo
收藏  |  浏览/下载：110/0  |  提交时间：2021/02/02
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Wang, Zhanguo
收藏  |  浏览/下载：71/0  |  提交时间：2021/02/02
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Li, Wei;  Wang, Weiying;  Jin, Peng;  Wang, Zhanguo
收藏  |  浏览/下载：104/0  |  提交时间：2021/02/02
Photoluminescence  Raman scattering  Pulsed atomic layer epitaxy  AlGaN alloys  
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Li, Wei;  Wang, Weiying;  Jin, Peng;  Wang, Zhanguo
收藏  |  浏览/下载：114/0  |  提交时间：2021/02/02
Photoluminescence  Raman scattering  Pulsed atomic layer epitaxy  AlGaN alloys  
An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 26, 页码: 6
作者:  Deng, Qingwen;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yin, Haibo;  Chen, Hong;  Hou, Qifeng;  Lin, Defeng;  Li, Jinmin;  Wang, Zhanguo;  Hou, Xun
收藏  |  浏览/下载：108/0  |  提交时间：2021/02/02