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The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei;  Peng, EnChao;  Lin, DeFeng;  Feng, Chun;  Jiang, LiJuan
收藏  |  浏览/下载：123/0  |  提交时间：2021/02/02
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Wang, Zhanguo
收藏  |  浏览/下载：86/0  |  提交时间：2021/02/02
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Wang, Zhanguo
收藏  |  浏览/下载：109/0  |  提交时间：2021/02/02
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Wang, Zhanguo
收藏  |  浏览/下载：70/0  |  提交时间：2021/02/02
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Li, Wei;  Wang, Weiying;  Jin, Peng;  Wang, Zhanguo
收藏  |  浏览/下载：103/0  |  提交时间：2021/02/02
Photoluminescence  Raman scattering  Pulsed atomic layer epitaxy  AlGaN alloys  
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Li, Wei;  Wang, Weiying;  Jin, Peng;  Wang, Zhanguo
收藏  |  浏览/下载：113/0  |  提交时间：2021/02/02
Photoluminescence  Raman scattering  Pulsed atomic layer epitaxy  AlGaN alloys  
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 10, 页码: 3
作者:  Hou, Qifeng;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Yin, Haibo;  Deng, Qingwen;  Li, Jinmin;  Wang, Zhanguo;  Hou, Xun
收藏  |  浏览/下载：107/0  |  提交时间：2021/02/02
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan, Xu;  Wei, Meng;  Yang, Cuibai;  Xiao, Hongling;  Wang, Cuimei;  Wang, Xiaoliang
收藏  |  浏览/下载：97/0  |  提交时间：2021/02/02
Sandwich structure  Stress  Aluminum nitride  Gallium nitride  Silicon  
Theoretical study on InxGa1-xN/GaN quantum dots solar cell 期刊论文
PHYSICA B-CONDENSED MATTER, 2011, 卷号: 406, 期号: 1, 页码: 73-76
作者:  Deng, Qingwen;  Wang, Xiaoliang;  Yang, Cuibai;  Xiao, Hongling;  Wang, Cuimei;  Yin, Haibo;  Hou, Qifeng;  Li, Jinmin;  Wang, Zhanguo;  Hou, Xun
收藏  |  浏览/下载：124/0  |  提交时间：2021/02/02
Efficiency  Quantum dot  GaN  
Theoretical design and performance of InxGa1-xN two-junction solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 24, 页码: 6
作者:  Zhang, Xiaobin;  Wang, Xiaoliang;  Xiao, Hongling;  Yang, Cuibai;  Ran, Junxue;  Wang, Cuimei;  Hou, Qifeng;  Li, Jinmin;  Wang, Zhanguo
收藏  |  浏览/下载：81/0  |  提交时间：2021/02/02