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Behavioural investigation of InN nanodots by surface topographies and phase images 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 44, 页码: 6
作者:  Deng, Qingwen;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yin, Haibo;  Chen, Hong;  Lin, Defeng;  Li, Jinmin;  Wang, Zhanguo;  Hou, Xun
收藏  |  浏览/下载：96/0  |  提交时间：2021/02/02
Behavioural investigation of InN nanodots by surface topographies and phase images 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 44, 页码: 6
作者:  Deng, Qingwen;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yin, Haibo;  Chen, Hong;  Lin, Defeng;  Li, Jinmin;  Wang, Zhanguo;  Hou, Xun
收藏  |  浏览/下载：103/0  |  提交时间：2021/02/02
Low temperature characteristics of AlGaN/GaN high electron mobility transistors 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 卷号: 56, 期号: 1, 页码: 4
作者:  Lin, D. F.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Qiang, L. J.;  Feng, C.;  Chen, H.;  Hou, Q. F.;  Deng, Q. W.;  Bi, Y.;  Kang, H.
收藏  |  浏览/下载：114/0  |  提交时间：2021/02/02
Surface characterization of AlGaN grown on Si (111) substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 331, 期号: 1, 页码: 29-32
作者:  Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Feng, Chun;  Jiang, Lijuan;  Yin, Haibo;  Chen, Hong
收藏  |  浏览/下载：97/0  |  提交时间：2021/02/02
Island nucleation  Raman scattering  Si (111) substrate  AlGaN epilayers  
The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 卷号: 55, 期号: 3, 页码: 5
作者:  Lin, D. F.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Jiang, L. J.;  Feng, C.;  Chen, H.;  Hou, Q. F.;  Deng, Q. W.;  Bi, Y.;  Kang, H.
收藏  |  浏览/下载：108/0  |  提交时间：2021/02/02
The influence of the 1st AlN and the 2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216
作者:  Bi, Yang;  Wang, XiaoLiang;  Yang, CuiBai;  Xiao, HongLing;  Wang, CuiMei;  Peng, EnChao;  Lin, DeFeng;  Feng, Chun;  Jiang, LiJuan
收藏  |  浏览/下载：120/0  |  提交时间：2021/02/02
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 34, 页码: 5
作者:  Deng, Qingwen;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yin, Haibo;  Chen, Hong;  Lin, Defeng;  Jiang, Lijuan;  Feng, Chun;  Li, Jinmin;  Wang, Zhanguo;  Hou, Xun
收藏  |  浏览/下载：121/0  |  提交时间：2021/02/02
Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 34, 页码: 5
作者:  Deng, Qingwen;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yin, Haibo;  Chen, Hong;  Lin, Defeng;  Jiang, Lijuan;  Feng, Chun;  Li, Jinmin;  Wang, Zhanguo;  Hou, Xun
收藏  |  浏览/下载：97/0  |  提交时间：2021/02/02
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Wang, Zhanguo
收藏  |  浏览/下载：83/0  |  提交时间：2021/02/02
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai;  Wang, Zhanguo
收藏  |  浏览/下载：105/0  |  提交时间：2021/02/02