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Mechanochemical activation of 2D MnPS3 for sub-attomolar sensing 期刊论文
NATURE COMMUNICATIONS, 2024, 卷号: 15, 期号: 1, 页码: 9
作者:  Chen, Wenjun;  Gui, Jiabao;  Weng, Xiangchao;  Tan, Junyang;  Huang, Junhua;  Lin, Zhiqiang;  Zhao, Benli;  Wang, Lang-Hong;  Zeng, Xin-An;  Teng, Changjiu;  Zhao, Shilong;  Ding, Baofu;  Liu, Bilu;  Cheng, Hui-Ming
收藏  |  浏览/下载：3/0  |  提交时间：2025/04/27
Internal ion transport in ionic 2D CuInP2S6 enabling multi-state neuromorphic computing with low operation current 期刊论文
MATERIALS TODAY, 2023, 卷号: 66, 页码: 9-16
作者:  Sun, Yujie;  Zhang, Rongjie;  Teng, Changjiu;  Tan, Junyang;  Zhang, Zehao;  Li, Shengnan;  Wang, Jingwei;  Zhao, Shilong;  Chen, Wenjun;  Liu, Bilu;  Cheng, Hui-Ming
收藏  |  浏览/下载：17/0  |  提交时间：2024/01/08
Memristor  Multi-state computing  Ion transport  Ionic 2D materials  Linear states  Low operation current  
Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies 期刊论文
SCIENCE BULLETIN, 2022, 卷号: 67, 期号: 16, 页码: 1649-1658
作者:  Tan, Junyang;  Zhang, Zongteng;  Zeng, Shengfeng;  Li, Shengnan;  Wang, Jingwei;  Zheng, Rongxu;  Hou, Fuchen;  Wei, Yinping;  Sun, Yujie;  Zhang, Rongjie;  Zhao, Shilong;  Nong, Huiyu;  Chen, Wenjun;  Gan, Lin;  Zou, Xiaolong;  Zhao, Yue;  Lin, Junhao;  Liu, Bilu;  Cheng, Hui -Ming
收藏  |  浏览/下载：64/0  |  提交时间：2023/05/09
Non-layered two-dimensional materials  Transition metal chalcogenides  Dual-metal precursors  Chemical vapor deposition  Ordered cation vacancies  
Controlled Growth of Wafer-Scale Transition Metal Dichalcogenides with a Vertical Composition Gradient for Artificial Synapses with High Linearity 期刊论文
ACS NANO, 2022, 卷号: 16, 期号: 8, 页码: 12318-12327
作者:  Tang, Lei;  Teng, Changjiu;  Xu, Runzhang;  Zhang, Zehao;  Khan, Usman;  Zhang, Rongjie;  Luo, Yuting;  Nong, Huiyu;  Liu, Bilu;  Cheng, Hui-Ming
收藏  |  浏览/下载：120/0  |  提交时间：2022/10/08
vertical composition gradient  transition metal dichalcogenides  chemical vapor deposition  wafer-scale  artificial synapses  device array  linearity  
Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory 期刊论文
ACS NANO, 2022, 卷号: 16, 期号: 4, 页码: 6309-6316
作者:  Zhang, Rongjie;  Lai, Yongjue;  Chen, Wenjun;  Teng, Changjiu;  Sun, Yujie;  Yang, Liusi;  Wang, Jingyun;  Liu, Bilu;  Cheng, Hui-Ming
收藏  |  浏览/下载：144/0  |  提交时间：2022/09/16
   2D materials  monolayer  MoS 2  wrinkles  memory  carrier trapping  conductive AFM