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The photosensitivity and its microstructural origin of Ge-doped silica fiber: Effect of H2 content 期刊论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2025, 卷号: 656, 页码: 8
作者:  Chen, Yichong;  Li, Xin;  Wang, Yafei;  Zhao, Mingjun;  Shao, Chongyun;  Yu, Chunlei;  Hu, Lili
收藏  |  浏览/下载：2/0  |  提交时间：2025/04/27
Photosensitivity  Germanium-doped fibers  H 2 content  Color centers  H(II)  
The photosensitivity and its microstructural origin of Ge-doped silica fiber: Effect of H2 content 期刊论文
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2025, 卷号: 656, 页码: 8
作者:  Chen, Yichong;  Li, Xin;  Wang, Yafei;  Zhao, Mingjun;  Shao, Chongyun;  Yu, Chunlei;  Hu, Lili
收藏  |  浏览/下载：3/0  |  提交时间：2025/04/27
Photosensitivity  Germanium-doped fibers  H 2 content  Color centers  H(II)  
High-performance gold/graphene/germanium photodetector based on a graphene-on-germanium wafer 期刊论文
NANOTECHNOLOGY, 2022, 卷号: 33, 期号: 34, 页码: 7
作者:  Jiang, Haiyan;  Li, Bo;  Wei, Yuning;  Feng, Shun;  Di, Zengfeng;  Xue, Zhongying;  Sun, Dongming;  Liu, Chi
收藏  |  浏览/下载：117/0  |  提交时间：2022/07/14
graphene  germanium  2D material  Fermi-level pinning  photodetector  
Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer 期刊论文
SMALL, 2022, 页码: 7
作者:  Wei, Yu-Ning;  Hu, Xian-Gang;  Zhang, Jian-Wei;  Tong, Bo;  Du, Jin-Hong;  Liu, Chang;  Sun, Dong-Ming;  Liu, Chi
收藏  |  浏览/下载：121/0  |  提交时间：2022/07/14
carbon nanotube films  Fermi-level pinning  germanium  metal-induced gap states  ohmic contacts  
n(+)Si/pGe Heterojunctions Fabricated by Low Temperature Ribbon Bonding With Passivating Interlayer 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 6, 页码: 716-719
作者:  Liu, Tony Chi;  Kabuyanagi, Shoichi;  Nishimura, Tomonori;  Yajima, Takeaki;  Toriumi, Akira;  Liu, TC (reprint author), Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan.
收藏  |  浏览/下载：111/0  |  提交时间：2017/08/17
Germanium  Heterojunctions  Passivation  Interlayer  Bonding  
Effect of rare earth elements on the structures and mechanical properties of magnesium alloys 期刊论文
Chinese Science Bulletin, 2013, 卷号: 58, 期号: 7, 页码: 816-820
作者:  Z. Lu;  J. Zhou;  Z. M. Sun;  R. S. Chen
收藏  |  浏览/下载：138/0  |  提交时间：2013/12/24
Magnesium Alloys  Solid Solution Hardening  First-principles  Chemical  Bonding  Initio Molecular-dynamics  Single-crystals  Elastic-constants  Transition-metals  Creep Strength  Germanium  Modulus  
Density-functional theory study of structures, stabilities, and electronic properties of the Cu-2-doped silicon clusters: Comparison with pure silicon clusters 期刊论文
Physica B-Condensed Matter, 2012, 卷号: 407, 期号: 21, 页码: 4379-4386
作者:  P. Shao;  X. Y. Kuang;  L. P. Ding;  M. M. Zhong;  Z. H. Wang
收藏  |  浏览/下载：114/0  |  提交时间：2013/02/05
Density Functional Theory  Cu-si Cluster  Geometric Configuration  Laser-absorption Spectroscopy  Flight Mass-spectroscopy  Supersonic  Molecular-beam  Doped Germanium Clusters  Si Cage Clusters  Copper  Silicides  Geometries  
The Raman spectroscopy of neutron transmutation doping isotope (74)Germanium nanocrystals embedded in SiO2 matrix 期刊论文
Solid State Communications, 2007, 卷号: 141, 期号: 9, 页码: 514-518
作者:  Y. W. Hu;  T. C. Lu;  S. B. Dun;  Q. Hu;  N. K. Huang;  S. B. Zhang;  B. Tang;  J. L. Dai;  L. Resnick;  I. Shlimak;  S. Zhu;  Q. M. Wei;  L. M. Wang
收藏  |  浏览/下载：122/0  |  提交时间：2012/04/13
Isotope Ge Nanocrystals  Transmuted Impurities  Laser Raman Scattering  Neutron Transmutation Doping  Visible Photoluminescence  Semiinsulating Gaas  Hopping Conduction  Thin-films  Scattering  Germanium  Sio2-films  Plasmons  Phonons  Growth  
Adsorption of Na on Ge(001)(2 x 1) surface 期刊论文
Physica B-Condensed Matter, 2006, 卷号: 371, 期号: 1, 页码: 50-55
作者:  H. Y. Xiao;  X. T. Zu
收藏  |  浏览/下载：79/0  |  提交时间：2012/04/14
Sodium  Germanium  Adsorption  Work Function  Ab Initio  Adsorbed Si(100) Surfaces  Double-layer Model  Ab-initio  Covered  Si(100)  2x1-k Surface  2 X-1  States  Cs  Overlayer  Oxidation  
In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 273, 期号: 3-4, 页码: 381-385
作者:  Gao, F;  Huang, DD;  Li, JP;  Liu, C
收藏  |  浏览/下载：98/0  |  提交时间：2021/02/02
doping  molecular beam epitaxy  germanium silicon alloys  semiconducting germanium  semiconducting silicon  bipolar transistors