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In situ doping control for growth of n-p-n Si/SiGe/Si heterojunction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 273, 期号: 3-4, 页码: 381-385
作者:  Gao, F;  Huang, DD;  Li, JP;  Liu, C
收藏  |  浏览/下载：98/0  |  提交时间：2021/02/02
doping  molecular beam epitaxy  germanium silicon alloys  semiconducting germanium  semiconducting silicon  bipolar transistors  
Changing the size and shape of Ge island by chemical etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 1-2, 页码: 17-21
作者:  Gao, F;  Huang, CJ;  Huang, DD;  Li, JP;  Sun, DZ;  Kong, MY;  Zeng, YP;  Li, JM;  Lin, LY
收藏  |  浏览/下载：90/0  |  提交时间：2021/02/02
atomic force microscopy  etching  nanostructures  molecular beam epitaxy  semiconducting germanium  semiconducting silicon  
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 页码: 766-769
作者:  Gao, F;  Lin, YX;  Huang, DD;  Li, JP;  Sun, DZ;  Kong, MY;  Zeng, YP;  Li, JM;  Lin, LY
收藏  |  浏览/下载：73/0  |  提交时间：2021/02/02
annealing  molecular beam epitaxy  germanium silicon alloys  semiconducting materials  
Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 223, 期号: 4, 页码: 489-493
作者:  Gao, F;  Huang, DD;  Li, JP;  Kong, MY;  Sun, DZ;  Li, JM;  Zeng, YP;  Lin, LY
收藏  |  浏览/下载：88/0  |  提交时间：2021/02/02
molecular beam epitaxy  semiconducting gegermanium  semiconducting silicon  bipolar transistors  heterojunction semiconductor devices