Comparison and mechanism of electromigration reliability between Cu wire and Au wire bonding in molding state

doi:10.1007/s10854-019-02840-6

IMR OpenIR

	Comparison and mechanism of electromigration reliability between Cu wire and Au wire bonding in molding state
	Du, Yahong; Gao, Li-Yin; Yu, Daquan; Liu, Zhi-Quan
	2020-02-01
发表期刊	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷号	31 期号:4 页码:2967-2975
摘要	Electromigration (EM) reliability and failure analysis of Cu wire and Au wire bonding processes on Al substrates after molding were investigated and compared systematically. According to the resistance as a function of EM time trend, there were four stages during the EM test for wire bonding that can tentatively be referred to as the fluctuating resistance stage, stable resistance stage, rapidly increasing resistance stage and quick failure stage of the sample. When the applied current was 1.8 A on a wire with a diameter of 20 mu m (at a current density of 5.7 x 10(5) A/cm(2)), the lifetimes of the Cu wire and Au wire bonding processes were 1032 h and 119 h, respectively, according to Weibull analyses. Two kinds of failure modes were observed: wire fracture and first bond fracture. Almost 90% of the failed samples belonged to wire fracture category. After the EM test, the thickness of intermetallic compounds (IMCs) at the anode interface was similar to that at the cathode interface for both the Cu wire and Au wire bonding cases, which means that the normal polarity effect during electromigration did not occur here. However, the thickness of the IMCs at the Au/Al bonding interface was thicker than that at the Cu/Al interface for both the aged and EM samples. Voids and cracks were observed within the Au wire-bonding interface. It is suspected that the Cu wire bonding process had a slower thermal diffusion and smaller EM flux than those of the Au wire bonding process. Due to a decrease in vacancy flux within the Cu wire bonding region, the cracks were also suppressed, which greatly extended the lifetime of the Cu wire bonds.
DOI	10.1007/s10854-019-02840-6
WOS记录号	WOS:000514597300023
引用统计	被引频次：11[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/155720
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Du, Yahong,Gao, Li-Yin,Yu, Daquan,et al. Comparison and mechanism of electromigration reliability between Cu wire and Au wire bonding in molding state[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2020,31(4):2967-2975.
APA	Du, Yahong,Gao, Li-Yin,Yu, Daquan,&Liu, Zhi-Quan.(2020).Comparison and mechanism of electromigration reliability between Cu wire and Au wire bonding in molding state.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,31(4),2967-2975.
MLA	Du, Yahong,et al."Comparison and mechanism of electromigration reliability between Cu wire and Au wire bonding in molding state".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 31.4(2020):2967-2975.