Bottom-Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via

IMR OpenIR

	Bottom-Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via
	Sun, FL; Liu, ZQ; Li, CF; Zhu, QS; Zhang, H; Suganuma, K; Zhu, QS (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Liu, ZQ (reprint author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China.; Liu, ZQ (reprint author), Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan.
	2018-02-01
发表期刊	MATERIALS
ISSN	1996-1944
卷号	11 期号:2 页码:-
摘要	This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV) with a high aspect ratio (similar to 4). With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm(2)) and convection conditions (300 rpm), which are the preconditions for copper deposition with a uniform deep-hole microstructure. The microstructure of a whole cross-section of deposited copper array was made up of (111) orientated columnar grains with parallel nanoscale twins that had thicknesses of about 22 nm. The hardness was also uniform along the growth direction, with 2.34 and 2.68 GPa for the top and bottom of the TSV, respectively. The gelatin additive is also first reported hereas a key factor in forming nanoscale twins by adsorbing on the cathode surface, in order to enhance the overpotential for cathodic reaction during the copper deposition process.; This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV) with a high aspect ratio (similar to 4). With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm(2)) and convection conditions (300 rpm), which are the preconditions for copper deposition with a uniform deep-hole microstructure. The microstructure of a whole cross-section of deposited copper array was made up of (111) orientated columnar grains with parallel nanoscale twins that had thicknesses of about 22 nm. The hardness was also uniform along the growth direction, with 2.34 and 2.68 GPa for the top and bottom of the TSV, respectively. The gelatin additive is also first reported hereas a key factor in forming nanoscale twins by adsorbing on the cathode surface, in order to enhance the overpotential for cathodic reaction during the copper deposition process.
部门归属	[sun, fu-long ; liu, zhi-quan ; li, cai-fu ; zhu, qing-sheng] chinese acad sci, inst met res, shenyang 110016, liaoning, peoples r china ; [sun, fu-long ; liu, zhi-quan] univ chinese acad sci, beijing 100049, peoples r china ; [liu, zhi-quan ; li, cai-fu ; zhang, hao ; suganuma, katsuaki] osaka univ, inst sci & ind res, osaka 5670047, japan
关键词	Columnar-grained Cu Twins Boundaries Nanoscale Strength Behavior Joints
学科领域	Materials Science, Multidisciplinary
资助者	National Key R&D Program of China [2017YFB0305501]; Natural Science Foundation of China [51401218, 51471180]; Science and Technology Program of Shenyang [F16-205-1-18]; Osaka University Visiting Scholar Program [J135104902]
收录类别	SCI
语种	英语
WOS记录号	WOS:000427534800146
引用统计	被引频次：19[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/79533
专题	中国科学院金属研究所
通讯作者	Liu, ZQ; Zhu, QS (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Liu, ZQ (reprint author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China.; Liu, ZQ (reprint author), Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan.
推荐引用方式 GB/T 7714	Sun, FL,Liu, ZQ,Li, CF,et al. Bottom-Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via[J]. MATERIALS,2018,11(2):-.
APA	Sun, FL.,Liu, ZQ.,Li, CF.,Zhu, QS.,Zhang, H.,...&Liu, ZQ .(2018).Bottom-Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via.MATERIALS,11(2),-.
MLA	Sun, FL,et al."Bottom-Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via".MATERIALS 11.2(2018):-.