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Dual-Mode Conversion of Photodetector and Neuromorphic Vision Sensor via Bias Voltage Regulation on a Single Device 期刊论文
ADVANCED MATERIALS, 2023, 页码: 11
作者:  Feng, Siyu;  Li, Jiangxu;  Feng, Lizhi;  Liu, Zitong;  Wang, Junchao;  Cui, Cong;  Zhou, Ouxiang;  Deng, Lijie;  Xu, Hanning;  Leng, Bing;  Chen, Xing-Qiu;  Jiang, Xin;  Liu, Baodan;  Zhang, Xinglai
收藏  |  浏览/下载：7/0  |  提交时间：2024/01/07
Ga2O3  GaN  neuromorphic vision sensors  photodetectors  synaptic plasticity  trench-bridged heterostructure  
VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 1-5
作者:  Zhao, Jie;  Zeng, Yiping;  Yang, Qiumin;  Li, Yiyang;  Cui, Lijie;  Liu, Chao
收藏  |  浏览/下载：105/0  |  提交时间：2021/02/02
Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting II-VI materials  
Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043
作者:  Yang, Qiumin;  Zhao, Jie;  Guan, Min;  Liu, Chao;  Cui, Lijie;  Han, Dejun;  Zeng, Yiping
收藏  |  浏览/下载：126/0  |  提交时间：2021/02/02
CdSe  Molecular beam epitaxy  Reflection high energy electron diffraction  X-ray diffraction  Atomic force microscopy  
Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043
作者:  Yang, Qiumin;  Zhao, Jie;  Guan, Min;  Liu, Chao;  Cui, Lijie;  Han, Dejun;  Zeng, Yiping
收藏  |  浏览/下载：104/0  |  提交时间：2021/02/02
CdSe  Molecular beam epitaxy  Reflection high energy electron diffraction  X-ray diffraction  Atomic force microscopy  
VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 1-5
作者:  Zhao, Jie;  Zeng, Yiping;  Yang, Qiumin;  Li, Yiyang;  Cui, Lijie;  Liu, Chao
收藏  |  浏览/下载：83/0  |  提交时间：2021/02/02
Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting II-VI materials  
Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
作者:  Zhao, Jie;  Zeng, Yiping;  Liu, Chao;  Cui, Lijie;  Li, Yanbo
收藏  |  浏览/下载：107/0  |  提交时间：2021/02/02
ZnTe  Molecular beam epitaxy  Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy