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Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization 期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2024, 卷号: 171, 页码: 139-146
作者:  Yue, Zhi Yun;  Zhang, Zhi Dong;  Wang, Zhan Jie
收藏  |  浏览/下载：8/0  |  提交时间：2024/01/08
Ferroelectric memristor  Ca -doped PZT  Ferroelectric polarization  Oxygen vacancies  Resistive switching  
Internal ion transport in ionic 2D CuInP2S6 enabling multi-state neuromorphic computing with low operation current 期刊论文
MATERIALS TODAY, 2023, 卷号: 66, 页码: 9-16
作者:  Sun, Yujie;  Zhang, Rongjie;  Teng, Changjiu;  Tan, Junyang;  Zhang, Zehao;  Li, Shengnan;  Wang, Jingwei;  Zhao, Shilong;  Chen, Wenjun;  Liu, Bilu;  Cheng, Hui-Ming
收藏  |  浏览/下载：16/0  |  提交时间：2024/01/08
Memristor  Multi-state computing  Ion transport  Ionic 2D materials  Linear states  Low operation current  
A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction 期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2022, 卷号: 128, 页码: 239-244
作者:  Wang, Yaning;  Li, Wanying;  Guo, Yimeng;  Huang, Xin;  Luo, Zhaoping;  Wu, Shuhao;  Wang, Hai;  Chen, Jiezhi;  Li, Xiuyan;  Zhan, Xuepeng;  Wang, Hanwen
收藏  |  浏览/下载：221/0  |  提交时间：2022/07/14
van der Waals heterostructures  Ferroelectrics  Memristor  Artificial synapse  Neuromorphic computing