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Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization 期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2024, 卷号: 171, 页码: 139-146
Authors:  Yue, Zhi Yun;  Zhang, Zhi Dong;  Wang, Zhan Jie
Favorite  |  View/Download：5/0  |  Submit date：2024/01/08
Ferroelectric memristor  Ca -doped PZT  Ferroelectric polarization  Oxygen vacancies  Resistive switching  
Improving resistive switching effect by embedding gold nanoparticles into ferroelectric thin films 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2023, 卷号: 968, 页码: 7
Authors:  Yue, Zhi Yun;  Zhang, Zhi Dong;  Wang, Zhan Jie
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PCZT thin films  Au nanoparticles  Ferroelectric polarization  Multi-level data storage  Resistive switching  
Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching 期刊论文
ACS NANO, 2023, 卷号: 17, 期号: 13, 页码: 12347-12357
Authors:  Huang, Biaohong;  Zhao, Xuefeng;  Li, Xiaoqi;  Li, Lingli;  Xie, Zhongshuai;  Wang, Di;  Feng, Dingshuai;  Jiang, Yuxuan;  Liu, Jingyan;  Li, Yizhuo;  Yuan, Guoliang;  Han, Zheng;  Paudel, Tula R.;  Xing, Guozhong;  Hu, Weijin;  Zhang, Zhidong
Favorite  |  View/Download：4/0  |  Submit date：2024/01/08
self-polarization  Schottky barrier  oxygenvacancy  BiFeO3  ferroelectric diode  
Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction 期刊论文
NANOSCALE ADVANCES, 2022, 页码: 8
Authors:  Zang, Chao;  Li, Bo;  Sun, Yun;  Feng, Shun;  Wang, Xin-Zhe;  Wang, Xiaohui;  Sun, Dong-Ming
Favorite  |  View/Download：38/0  |  Submit date：2023/05/09
Understanding and modulation of resistive switching behaviors in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3/Nb:SrTiO3 multilayer junctions 期刊论文
APPLIED SURFACE SCIENCE, 2022, 卷号: 574, 页码: 11
Authors:  Zheng, Hang Yu;  Bai, Yu;  Shao, Yan;  Yu, Hai Yi;  Chen, Bing;  Lin, Jun Liang;  Zhang, Fan;  Wang, Chao;  Wang, Zhan Jie
Favorite  |  View/Download：122/0  |  Submit date：2022/07/01
Ferroelectric multilayer junction  Resistive switching  Ferroelectric field effect  Depletion layer width  
Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021, 页码: 10
Authors:  Huang, Biaohong;  Xie, Zhongshuai;  Feng, Dingshuai;  Li, Lingli;  Li, Xiaoqi;  Paudel, Tula R.;  Han, Zheng;  Hu, Weijin;  Yuan, Guoliang;  Wu, Tom;  Zhang, Zhidong
Favorite  |  View/Download：103/0  |  Submit date：2022/07/01
BiFeO3  current jump  domain wall creep  ferroelectric resistive switching  oxygen vacancy  space-charge-limited current  
Single-Dislocation Schottky Diodes 期刊论文
NANO LETTERS, 2021, 卷号: 21, 期号: 13, 页码: 5586-5592
Authors:  Tao, Ang;  Yao, Tingting;  Jiang, Yixiao;  Yang, Lixin;  Yan, Xuexi;  Ohta, Hiromichi;  Ikuhara, Yuichi;  Chen, Chunlin;  Ye, Hengqiang;  Ma, Xiuliang
Favorite  |  View/Download：110/0  |  Submit date：2021/10/15
dislocation  Schottky diode  conductive atomic force microscopy  transmission electron microscopy  first-principles calculations  
Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 13, 期号: 26, 页码: 31001-31009
Authors:  Liu, Nan;  Cao, Yi;  Zhu, Yin-Lian;  Wang, Yu-Jia;  Tang, Yun-Long;  Wu, Bo;  Zou, Min-Jie;  Feng, Yan-Peng;  Ma, Xiu-Liang
Favorite  |  View/Download：141/0  |  Submit date：2021/10/15
resistive switching  spinodal decomposition  perovskites  atomic force microscopy  transmission electron microscopy  
High-performance flexible resistive random access memory devices based on graphene oxidized with a perpendicular oxidation gradient 期刊论文
NANOSCALE, 2021, 卷号: 13, 期号: 4, 页码: 2448-2455
Authors:  Aziz, Tariq;  Wei, Shijing;  Sun, Yun;  Ma, Lai-Peng;  Pei, Songfeng;  Dong, Shichao;  Ren, Wencai;  Liu, Qi;  Cheng, Hui-Ming;  Sun, Dong-Ming
Favorite  |  View/Download：147/0  |  Submit date：2021/03/15
Charged domain wall modulation of resistive switching with large ON/OFF ratios in high density BiFeO3 nano-islands 期刊论文
ACTA MATERIALIA, 2020, 卷号: 187, 页码: 12-18
Authors:  Han, M. J.;  Tang, Y. L.;  Wang, Y. J.;  Zhu, Y. L.;  Ma, J. Y.;  Geng, W. R.;  Feng, Y. P.;  Zou, M. J.;  Zhang, N. B.;  Ma, X. L.
Favorite  |  View/Download：200/0  |  Submit date：2021/02/02
Resistive switching behavior  Charged domain walls  Conductive filament mode  Transmission electron microscopy  Piezoresponse force microscopy