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Interface Element Accumulation-Induced Single Ferroelectric Domain for High-Performance Neuromorphic Synapse 期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2025, 页码: 12
作者:  Li, Xiaoqi;  Liu, Jiaqi;  Xu, Fan;  Ali, Sajjad;  Wu, Han;  Huang, Biaohong;  Deng, Haoyue;  Li, Yizhuo;  Jiang, Yuxuan;  Fan, Zhen;  Tang, Yunlong;  Wang, Yujia;  Bououdina, Mohamed;  Yang, Teng;  Hu, Weijin;  Zhang, Zhidong
收藏  |  浏览/下载：5/0  |  提交时间：2025/04/27
BaTiO3  ferroelectric synapse  neuromorphic computing  oxygen vacancy  single domain  Sr diffusion  
Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization 期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2024, 卷号: 171, 页码: 139-146
作者:  Yue, Zhi Yun;  Zhang, Zhi Dong;  Wang, Zhan Jie
收藏  |  浏览/下载：10/0  |  提交时间：2024/01/08
Ferroelectric memristor  Ca -doped PZT  Ferroelectric polarization  Oxygen vacancies  Resistive switching  
Improving resistive switching effect by embedding gold nanoparticles into ferroelectric thin films 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2023, 卷号: 968, 页码: 7
作者:  Yue, Zhi Yun;  Zhang, Zhi Dong;  Wang, Zhan Jie
收藏  |  浏览/下载：17/0  |  提交时间：2024/01/08
PCZT thin films  Au nanoparticles  Ferroelectric polarization  Multi-level data storage  Resistive switching  
Improvement of memristive switching of Pb(Zr0.52Ti0.48)O3/Nb:SrTiO3 heterostructures via La doping 期刊论文
VACUUM, 2023, 卷号: 218, 页码: 11
作者:  Yue, Zhi Yun;  Lin, Jun Liang;  Bai, Yu;  Zhang, Zhi Dong;  Wang, Zhan Jie
收藏  |  浏览/下载：4/0  |  提交时间：2025/04/27
La-doped PZT  Ferroelectric heterostructures  Resistive switching behavior  Ferroelectric polarization  Oxygen vacancies  
Improvement of memristive switching of Pb(Zr0.52Ti0.48)O3/Nb:SrTiO3 heterostructures via La doping 期刊论文
VACUUM, 2023, 卷号: 218, 页码: 11
作者:  Yue, Zhi Yun;  Lin, Jun Liang;  Bai, Yu;  Zhang, Zhi Dong;  Wang, Zhan Jie
收藏  |  浏览/下载：3/0  |  提交时间：2025/04/27
La-doped PZT  Ferroelectric heterostructures  Resistive switching behavior  Ferroelectric polarization  Oxygen vacancies  
Schottky Barrier Control of Self-Polarization for a Colossal Ferroelectric Resistive Switching 期刊论文
ACS NANO, 2023, 卷号: 17, 期号: 13, 页码: 12347-12357
作者:  Huang, Biaohong;  Zhao, Xuefeng;  Li, Xiaoqi;  Li, Lingli;  Xie, Zhongshuai;  Wang, Di;  Feng, Dingshuai;  Jiang, Yuxuan;  Liu, Jingyan;  Li, Yizhuo;  Yuan, Guoliang;  Han, Zheng;  Paudel, Tula R.;  Xing, Guozhong;  Hu, Weijin;  Zhang, Zhidong
收藏  |  浏览/下载：13/0  |  提交时间：2024/01/08
self-polarization  Schottky barrier  oxygenvacancy  BiFeO3  ferroelectric diode  
Uniform self-rectifying resistive random-access memory based on an MXene-TiO2 Schottky junction 期刊论文
NANOSCALE ADVANCES, 2022, 页码: 8
作者:  Zang, Chao;  Li, Bo;  Sun, Yun;  Feng, Shun;  Wang, Xin-Zhe;  Wang, Xiaohui;  Sun, Dong-Ming
收藏  |  浏览/下载：43/0  |  提交时间：2023/05/09
Understanding and modulation of resistive switching behaviors in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3/Nb:SrTiO3 multilayer junctions 期刊论文
APPLIED SURFACE SCIENCE, 2022, 卷号: 574, 页码: 11
作者:  Zheng, Hang Yu;  Bai, Yu;  Shao, Yan;  Yu, Hai Yi;  Chen, Bing;  Lin, Jun Liang;  Zhang, Fan;  Wang, Chao;  Wang, Zhan Jie
收藏  |  浏览/下载：129/0  |  提交时间：2022/07/01
Ferroelectric multilayer junction  Resistive switching  Ferroelectric field effect  Depletion layer width  
Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021, 页码: 10
作者:  Huang, Biaohong;  Xie, Zhongshuai;  Feng, Dingshuai;  Li, Lingli;  Li, Xiaoqi;  Paudel, Tula R.;  Han, Zheng;  Hu, Weijin;  Yuan, Guoliang;  Wu, Tom;  Zhang, Zhidong
收藏  |  浏览/下载：112/0  |  提交时间：2022/07/01
BiFeO3  current jump  domain wall creep  ferroelectric resistive switching  oxygen vacancy  space-charge-limited current  
Single-Dislocation Schottky Diodes 期刊论文
NANO LETTERS, 2021, 卷号: 21, 期号: 13, 页码: 5586-5592
作者:  Tao, Ang;  Yao, Tingting;  Jiang, Yixiao;  Yang, Lixin;  Yan, Xuexi;  Ohta, Hiromichi;  Ikuhara, Yuichi;  Chen, Chunlin;  Ye, Hengqiang;  Ma, Xiuliang
收藏  |  浏览/下载：116/0  |  提交时间：2021/10/15
dislocation  Schottky diode  conductive atomic force microscopy  transmission electron microscopy  first-principles calculations