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Probing the role of silver and gold based double perovskite halide oxides for optoelectronic and photocatalytic applications 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2025, 卷号: 190, 页码: 11
作者:  Rahman, Attaur;  Abid, Aqsa;  Haneef, Muhammad;  Amin, Bin;  Elmasry, Yasser
收藏  |  浏览/下载：2/0  |  提交时间：2025/04/27
Double perovskite halide oxides  Optoelectronic  Photocatalytic applications  Density functional theory  Mechanical properties  Direct band gap  
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:  Zhao, Jie;  Hu, Lizhong
收藏  |  浏览/下载：87/0  |  提交时间：2021/02/02
ZnO  Pulsed laser deposition  X-ray diffraction  Photoluminescence  Reflection high-energy electron diffraction  
Photoluminescence characteristics of InP annealed in phosphorus and iron phosphide ambiences 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2005, 卷号: 8, 期号: 4, 页码: 531-535
作者:  Zhao, YW;  Dong, HW;  Li, JM;  Ling, LY
收藏  |  浏览/下载：108/0  |  提交时间：2021/02/02
indium phosphide  annealing  photoluminescence  
Effect of magnetic metal cluster doping on dielectric property of LaAlO3 thin films prepared by pulsed laser deposition 期刊论文
Materials Science in Semiconductor Processing, 2004, 卷号: 7, 期号: 4-6, 页码: 237-241
作者:  H. Jiang;  X. Y. Qiu;  G. L. Yuan;  H. Zhu;  J. M. Liu
收藏  |  浏览/下载：93/0  |  提交时间：2012/04/14
Dielectric Capacitance  Magnetism  Nanoparticle  Percolation-threshold  Critical-behavior  Gate Dielectrics  Constant  Composites  Conductivity  Transition  
Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs 期刊论文
Materials Science in Semiconductor Processing, 2004, 卷号: 7, 期号: 1-2, 页码: 19-25
作者:  Z. C. Li;  H. Zhang;  Y. B. Xu
收藏  |  浏览/下载：75/0  |  提交时间：2012/04/14
Amorphous Gaas  Electron Beam Irradiation  Crystallization  Electron  Microscopy  Induced Epitaxial Regrowth  Silicon  Crystallization  Ge  Irradiation  Kinetics  Si  Amorphization  Cazrti2o7  Damage  
Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 卷号: 6, 期号: 4, 页码: 215-218
作者:  Dong, HW;  Zhao, YW;  Li, JM
收藏  |  浏览/下载：65/0  |  提交时间：2021/02/02
semi-insulating InP  ion implantation  silicon  annealing  activation  
Annealing and activation of silicon implanted in semi-insulating InP substrates 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 卷号: 6, 期号: 4, 页码: 215-218
作者:  Dong, HW;  Zhao, YW;  Li, JM
收藏  |  浏览/下载：64/0  |  提交时间：2021/02/02
semi-insulating InP  ion implantation  silicon  annealing  activation