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Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC 期刊论文
Journal of Applied Physics, 2003, 卷号: 94, 期号: 5, 页码: 3004-3010
作者:  X. D. Chen;  S. Fung;  C. C. Ling;  C. D. Beling;  M. Gong
收藏  |  浏览/下载:73/0  |  提交时间:2012/04/14
6h Silicon-carbide  Positron-annihilation  Defect Centers  
Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence 期刊论文
APPLIED PHYSICS LETTERS, 2002, 卷号: 80, 期号: 21, 页码: 3934-3936
作者:  Ling, CC;  Mui, WK;  Lam, CH;  Beling, CD;  Fung, S;  Lui, MK;  Cheah, KW;  Li, KF;  Zhao, YW;  Gong, M
收藏  |  浏览/下载:83/0  |  提交时间:2021/02/02
Creation and suppression of point defects through a kick-out substitution process of Fe in InP 期刊论文
APPLIED PHYSICS LETTERS, 2002, 卷号: 80, 期号: 16, 页码: 2878-2879
作者:  Zhao, YW;  Dong, HW;  Chen, YH;  Zhang, YH;  Jiao, JH;  Zhao, JQ;  Lin, LY;  Fung, S
收藏  |  浏览/下载:81/0  |  提交时间:2021/02/02
Positron-annihilation study of compensation defects in InP 期刊论文
JOURNAL OF APPLIED PHYSICS, 2002, 卷号: 91, 期号: 4, 页码: 1998-2001
作者:  Shan, YY;  Deng, AH;  Ling, CC;  Fung, S;  Ling, CD;  Zhao, YW;  Sun, TN;  Sun, NF
收藏  |  浏览/下载:85/0  |  提交时间:2021/02/02