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Thermal Stability of WB2 and W-B-N Films Deposited by Magnetron Sputtering 期刊论文
ACTA METALLURGICA SINICA-ENGLISH LETTERS, 2019, 卷号: 32, 期号: 1, 页码: 136-144
作者:  Liu, Yan-Ming;  Li, Tong;  Liu, Feng;  Pei, Zhi-Liang
收藏  |  浏览/下载：192/0  |  提交时间：2021/02/02
AlB2-type WB2 films  W-B-N films  Magnetron sputtering  Thermal stability  Mechanical properties  
Thermal Stability of WB2 and W-B-N Films Deposited by Magnetron Sputtering 期刊论文
ACTA METALLURGICA SINICA-ENGLISH LETTERS, 2019, 卷号: 32, 期号: 1, 页码: 136-144
作者:  Liu, Yan-Ming;  Li, Tong;  Liu, Feng;  Pei, Zhi-Liang
收藏  |  浏览/下载：137/0  |  提交时间：2021/02/02
AlB2-type WB2 films  W-B-N films  Magnetron sputtering  Thermal stability  Mechanical properties  
Competition mechanism between microstructure type and inclusion level in determining VHCF behavior of bainite/martensite dual phase steels 期刊论文
International Journal of Fatigue, 2011, 卷号: 33, 期号: 3, 页码: 500-506
作者:  Y. Yu;  J. L. Gu;  F. L. Shou;  L. Xu;  B. Z. Bai;  Y. B. Liu
Adobe PDF(1448Kb)  |  收藏  |  浏览/下载：148/0  |  提交时间：2012/04/13
Bainite/martensite  Very High Cycle Fatigue  S-n Curves  Microstructure  Type  Inclusion Level  High-strength Steels  High-cycle Fatigue  Long-life Fatigue  Size  Regime  
Structure, magnetic and electrical transport properties of Mn(4-x)Ag(x)N compounds 期刊论文
Materials Science-Poland, 2009, 卷号: 27, 期号: 1, 页码: 33-42
作者:  W. J. Feng;  D. Li;  Q. Zhang;  Y. F. Deng;  S. Ma;  Z. D. Zhang
Adobe PDF(446Kb)  |  收藏  |  浏览/下载：70/0  |  提交时间：2012/04/13
Antiferromagnetism  Spin Reorientation  Magnetoresistance  Metallic Perovskite-type  Mn4n  Manganese  Antiferromagnet  Phase  
Effect of Re on deformation and slip systems of a Ni base single-crystal superalloy 期刊论文
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2007, 卷号: 458, 期号: 1-2, 页码: 39-43
作者:  Yu Jinjiang;  Sun Xiaofeng;  Jin Tao;  Zhao Nairen;  Guan Hengrong;  Hu Zhuangqi
收藏  |  浏览/下载：73/0  |  提交时间：2021/02/02
Re clusters  gamma' rafting  P-N type directional coarsening  slip systems  
Photoluminescence study of Ge nanocrystals irradiated by reactor neutron flux 期刊论文
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 2007, 2007, 卷号: 264, 264, 期号: 2, 页码: 272-276, 272-276
作者:  S. B. Dun;  T. C. Lu;  Q. Hu;  Y. W. Hu;  C. F. You;  S. B. Zhang;  B. Tang;  J. L. Dai;  N. K. Huang
收藏  |  浏览/下载：146/0  |  提交时间：2012/04/13
Ge Nanocrystals  Ge Nanocrystals  Neutron Transmutation Doping  Neutron Transmutation Doping  Photoluminescence  Photoluminescence  Raman  Raman  Scattering  Scattering  Doped Si Nanocrystals  Doped Si Nanocrystals  Electron-spin-resonance  Electron-spin-resonance  Semiconductor  Semiconductor  Nanocrystals  Nanocrystals  N-type  N-type  Implanted Sio2-films  Implanted Sio2-films  Silicon Nanocrystals  Silicon Nanocrystals  Porous  Porous  Silicon  Silicon  Raman  Raman  Luminescence  Luminescence  Temperature  Temperature  
Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2000, 卷号: 208, 期号: 1-4, 页码: 322-326
作者:  Liu, JP;  Huang, DD;  Li, JP;  Lin, YX;  Sun, DZ;  Kong, MY
收藏  |  浏览/下载：105/0  |  提交时间：2021/02/02
n-type doping  p-type doping  Si/SiGe  HBT  GSMBE  
Phases of melt-spun Sm1-xFe7+x alloys and magnetic properties of their nitrides 期刊论文
Journal of Magnetism and Magnetic Materials, 1997, 卷号: 173, 期号: 3, 页码: 295-301
作者:  H. T. Kim;  Q. F. Xiao;  Z. D. Zhang;  D. Y. Geng;  Y. B. Kim;  T. K. Kim;  H. M. Kwon
收藏  |  浏览/下载：75/0  |  提交时间：2012/04/14
Quenching  sm1-xfe7+x (O<=x<=0.9) Alloys  Th2zn17-type Structure  Tbcu7-type Structure  Nitrogenation  Earth Intermetallic Compounds  Sm-fe-n  
EFFECT OF BIAS ANNEALING ON AU/N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION 期刊论文
Journal of Applied Physics, 1994, 卷号: 76, 期号: 9, 页码: 5592-5594
作者:  M. H. Yuan;  Y. Q. Jia;  G. G. Qin
收藏  |  浏览/下载：123/0  |  提交时间：2012/04/14
N-type Gaas  Crystalline Semiconductors  Ti/n-gaas  States  Diodes  
EFFECT OF REVERSE-BIAS ANNEALING AND ZERO-BIAS ANNEALING ON A HYDROGEN-CONTAINING AU/(N-TYPE GAAS) SCHOTTKY-BARRIER 期刊论文
Physical Review B, 1993, 卷号: 48, 期号: 24, 页码: 17986-17994
作者:  M. H. Yuan;  H. Z. Song;  S. X. Jin;  H. P. Wang;  Y. P. Qiao;  G. G. Qin
收藏  |  浏览/下载：100/0  |  提交时间：2012/04/14
Metal-semiconductor Interfaces  Electrical-properties  110 Surfaces  N-type  States  Diodes  Contacts  Height  Model  Heterojunctions