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A superior interfacial reliability of Fe-Ni UBM during high temperature storage
Gao, Li-Yin; Li, Cai-Fu; Wan, Peng; Liu, Zhi-Quan; Li, CF; Liu, ZQ (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China.; Liu, ZQ (reprint author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China.
2017-06-01
Source PublicationJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN0957-4522
Volume28Issue:12Pages:8537-8545
AbstractBall shear test was conducted on the SnAgCu/Fe-Ni solder joints, as well as SnAgCu/Cu for comparison after reflow and 150 degrees C high temperature storage following the industrial JEDEC standards. According to microstructural observation, Fe-Ni UBMs show better diffusion barrier effect than Cu UBM, which form very thin FeSn2 or FeSn2+(Cu, Ni)(6)Sn-5 layers at the interface without any Kirkendall voids. With such thin IMC layers, the shear strengths of Fe-Ni solder joints were comparable to Cu solder joints, which are in the range of 6.3-6.4 mg/mu m(2) after reflow and then fall into 4.7-5.1 mg/mu m(2) after 1000 h storage. Statistic observations revealed four kinds of fracture mode among failed solder joints, which are ductile fracture, brittle fracture, UBM fracture and pad lift respectively. The UBM fracture is the most common failure mode for Cu solder joint due to the fast consumption and low mechanical strength of Cu UBM, while the ductile failure takes the majority for Fe-Ni UBMs although it gradually turned into brittle fracture later as the aging time increased. The related mechanism of fracture behavior was also discussed concerning the physical properties of interfacial IMCs. Combining the low IMC growth rate, the comparable shear strength and the ductile fracture mode, Fe-45Ni UBM is superior to Cu UBM on the interfacial reliability of high temperature storage.; Ball shear test was conducted on the SnAgCu/Fe-Ni solder joints, as well as SnAgCu/Cu for comparison after reflow and 150 degrees C high temperature storage following the industrial JEDEC standards. According to microstructural observation, Fe-Ni UBMs show better diffusion barrier effect than Cu UBM, which form very thin FeSn2 or FeSn2+(Cu, Ni)(6)Sn-5 layers at the interface without any Kirkendall voids. With such thin IMC layers, the shear strengths of Fe-Ni solder joints were comparable to Cu solder joints, which are in the range of 6.3-6.4 mg/mu m(2) after reflow and then fall into 4.7-5.1 mg/mu m(2) after 1000 h storage. Statistic observations revealed four kinds of fracture mode among failed solder joints, which are ductile fracture, brittle fracture, UBM fracture and pad lift respectively. The UBM fracture is the most common failure mode for Cu solder joint due to the fast consumption and low mechanical strength of Cu UBM, while the ductile failure takes the majority for Fe-Ni UBMs although it gradually turned into brittle fracture later as the aging time increased. The related mechanism of fracture behavior was also discussed concerning the physical properties of interfacial IMCs. Combining the low IMC growth rate, the comparable shear strength and the ductile fracture mode, Fe-45Ni UBM is superior to Cu UBM on the interfacial reliability of high temperature storage.
description.department[gao, li-yin ; li, cai-fu ; wan, peng ; liu, zhi-quan] chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china ; [gao, li-yin ; wan, peng ; liu, zhi-quan] univ chinese acad sci, beijing 100049, peoples r china
Subject AreaEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
Funding OrganizationNatural Science Foundation of China [51401218]; Major National Science and Technology Program of China [2011ZX02602]
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/78112
Collection中国科学院金属研究所
Corresponding AuthorLi, CF; Liu, ZQ (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China.; Liu, ZQ (reprint author), Univ Chinese Acad Sci, Beijing 100049, Peoples R China.
Recommended Citation
GB/T 7714
Gao, Li-Yin,Li, Cai-Fu,Wan, Peng,et al. A superior interfacial reliability of Fe-Ni UBM during high temperature storage[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(12):8537-8545.
APA Gao, Li-Yin.,Li, Cai-Fu.,Wan, Peng.,Liu, Zhi-Quan.,Li, CF.,...&Liu, ZQ .(2017).A superior interfacial reliability of Fe-Ni UBM during high temperature storage.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,28(12),8537-8545.
MLA Gao, Li-Yin,et al."A superior interfacial reliability of Fe-Ni UBM during high temperature storage".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 28.12(2017):8537-8545.
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