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Controlled growth of two-dimensional InAs single crystals via van der Waals epitaxy 期刊论文
NANO RESEARCH, 2022, 页码: 6
作者:  Dai, Jiuxiang;  Yang, Teng;  Jin, Zhitong;  Zhong, Yunlei;  Hu, Xianyu;  Zou, Jingyi;  Xu, Weigao;  Li, Tao;  Lin, Yuxuan;  Zhang, Xu;  Zhou, Lin
收藏  |  浏览/下载：122/0  |  提交时间：2022/07/14
two-dimensional materials  van der Waals epitaxy  indium arsenide  nonlayered material  
Atomic-resolution study on the interface structure and strain state reversion of the Bi2Sr2CuO6+delta/MgO heterostructure 期刊论文
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2021, 卷号: 592, 页码: 291-295
作者:  Zhang, Jian;  Wang, Weizhen;  Wang, Nan;  Wang, Mingguang;  Qi, Yang
收藏  |  浏览/下载：153/0  |  提交时间：2021/10/15
High-T-c superconductors  Thin films  Interface structure  Microstructure  Domain matching epitaxy  Thermal expansion mismatch  Residual strain  
Self-assembled three-dimensional framework of PbTiO3:epsilon-Fe2O3 nanostructures with room temperature multiferroism 期刊论文
APPLIED SURFACE SCIENCE, 2021, 卷号: 544, 页码: 8
作者:  Cao, Yi;  Wu, Bo;  Zhu, Yin-Lian;  Wang, Yu-Jia;  Tang, Yun-Long;  Liu, Nan;  Liu, Jia-Qi;  Ma, Xiu-Liang
收藏  |  浏览/下载：159/0  |  提交时间：2021/10/15
Composite multiferroics  Preferential epitaxy  Magnetoelectric coupling  Scanning probe microscopy  Strain engineering  
Epitaxial growth and oxidation behavior of an overlay coating on a Ni-base single-crystal superalloy by laser cladding 期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2019, 卷号: 35, 期号: 2, 页码: 344-350
作者:  Liang, Jingjing;  Liu, Yongsheng;  Li, Jinguo;  Zhou, Yizhou;  Sun, Xiaofeng
收藏  |  浏览/下载：113/0  |  提交时间：2021/02/02
Laser cladding  Single crystal growth  Epitaxy  Overlay coating  
Chromium- induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films 期刊论文
PHYSICAL REVIEW B, 2018, 卷号: 97, 期号: 11, 页码: -
作者:  Wang, F;  Zhang, HR;  Jiang, J;  Zhao, YF;  Yu, J;  Liu, W;  Li, D;  Chan, MHW;  Sun, JR;  Zhang, ZD;  Chang, CZ;  Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.;  Chang, CZ (reprint author), Penn State Univ, Dept Phys, University Pk, PA 16802 USA.
收藏  |  浏览/下载：106/0  |  提交时间：2018/06/05
Realization  State  Semiconductor  Epitaxy  
The nucleation and growth mechanism of Ni-Sn eutectic in a single crystal superalloy 期刊论文
ELSEVIER SCIENCE BV, 2017, 卷号: 479, 页码: 75-82
作者:  Jiang, Weiguo;  Wang, Li;  Li, Xiangwei;  Lou, Langhong;  Jiang, WG (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.
收藏  |  浏览/下载：259/0  |  提交时间：2018/01/10
Crystal Structure  Growth From Melt  Solid Phase Epitaxy  Alloys  
Growth of alpha-axis ZnO films on the defective substrate with different O/Zn ratios: A reactive force field based molecular dynamics study 期刊论文
Journal of Alloys and Compounds, 2015, 卷号: 628, 页码: 317-324
作者:  L.;  Shahzad Liu, M. B.;  Qi, Y.
收藏  |  浏览/下载：153/0  |  提交时间：2015/05/08
Zinc Oxide  Non-polar Thin Films  Atomic Scale Structure  Point Defects  Molecular Dynamics Simulations  Atomic Layer Deposition  Beam Epitaxy  Thin-films  Zinc-oxide  Plane  Sapphire  Homoepitaxial Growth  Optical-properties  Temperature  Orientation  Nanogenerators  
Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy 期刊论文
Surface Science, 2014, 卷号: 621, 页码: 104-108
作者:  C. H. Yan;  H. Guo;  J. Wen;  Z. D. Zhang;  L. L. Wang;  K. He;  X. C. Ma;  S. H. Ji;  X. Chen;  Q. K. Xue
收藏  |  浏览/下载：164/0  |  提交时间：2014/03/14
Topological Crystalline Insulator  Electronic Structure  Molecular Beam  Epitaxy  Scanning Tunneling Microscopy  Angle-resolved Photoemission  Spectroscopy  Experimental Realization  Bi2se3  Bi2te3  Phase  
Interfaces of c-axis oriented ZnO thin films on MgO (001) substrates 期刊论文
Thin Solid Films, 2014, 卷号: 558, 页码: 237-240
作者:  S. B. Mi
收藏  |  浏览/下载：118/0  |  提交时间：2014/07/03
Interfaces  Electron Microscopy  Thin Films  Defects  Pulse Laser  Deposition  Zinc Oxide  Molecular-beam Epitaxy  Electron-gas  Growth  Heterostructures  Fabrication  Defects  
Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays 期刊论文
Acs Applied Materials & Interfaces, 2014, 卷号: 6, 期号: 16, 页码: 14159-14166
作者:  B. D. Liu;  F. Yuan;  B. Dierre;  T. Sekiguchi;  S. Zhang;  Y. K. Xu;  X. Jiang
收藏  |  浏览/下载：133/0  |  提交时间：2015/01/14
Gan  Nanowire Arrays  Epitaxial Growth  Interface  Yellow-band Emission  Vapor-phase Epitaxy  Gallium Nitride  Spatial-distribution  Luminescence  Carbon  Cathodoluminescence  Microstructure  Nanodevices  Fabrication  Mechanism