中文版 | English

在结果中检索

IMR OpenIR

浏览/检索结果: 共8条，第1-8条 帮助

已选(0)清除 条数/页：   排序方式：
VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 1-5
作者:  Zhao, Jie;  Zeng, Yiping;  Yang, Qiumin;  Li, Yiyang;  Cui, Lijie;  Liu, Chao
收藏  |  浏览/下载：105/0  |  提交时间：2021/02/02
Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting II-VI materials  
Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043
作者:  Yang, Qiumin;  Zhao, Jie;  Guan, Min;  Liu, Chao;  Cui, Lijie;  Han, Dejun;  Zeng, Yiping
收藏  |  浏览/下载：126/0  |  提交时间：2021/02/02
CdSe  Molecular beam epitaxy  Reflection high energy electron diffraction  X-ray diffraction  Atomic force microscopy  
Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043
作者:  Yang, Qiumin;  Zhao, Jie;  Guan, Min;  Liu, Chao;  Cui, Lijie;  Han, Dejun;  Zeng, Yiping
收藏  |  浏览/下载：104/0  |  提交时间：2021/02/02
CdSe  Molecular beam epitaxy  Reflection high energy electron diffraction  X-ray diffraction  Atomic force microscopy  
VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 1-5
作者:  Zhao, Jie;  Zeng, Yiping;  Yang, Qiumin;  Li, Yiyang;  Cui, Lijie;  Liu, Chao
收藏  |  浏览/下载：84/0  |  提交时间：2021/02/02
Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting II-VI materials  
Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文
APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886
作者:  Zhao, Jie;  Zeng, Yiping;  Liu, Chao;  Cui, Lijie;  Li, Yanbo
收藏  |  浏览/下载：108/0  |  提交时间：2021/02/02
ZnTe  Molecular beam epitaxy  Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
作者:  Zhao, Jie;  Zeng, Yiping;  Liu, Chao;  Li, Yanbo
收藏  |  浏览/下载：80/0  |  提交时间：2021/02/02
Reflection high-energy electron diffraction  Atomic force microscopy  Molecular beam epitaxy  Zinc compounds  Semiconducting II-VI materials  
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:  Zhao, Jie;  Hu, Lizhong
收藏  |  浏览/下载：88/0  |  提交时间：2021/02/02
ZnO  Pulsed laser deposition  X-ray diffraction  Photoluminescence  Reflection high-energy electron diffraction  
Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy 期刊论文
Journal of Crystal Growth, 2004, 卷号: 271, 期号: 1-2, 页码: 165-170
作者:  W. F. Xiang;  H. B. Lu;  Z. H. Chen;  X. B. Lu;  M. He;  H. Tian;  Y. L. Zhou;  C. R. Li;  X. L. Ma
收藏  |  浏览/下载：170/0  |  提交时间：2012/04/14
Annealing  Reflection High-energy Electron Diffraction  X-ray  Diffraction  Epitaxial Growth  Laser Molecular Beam Epitaxy  Laalo3 Film  Thin-films  Buffer Layers  In-situ  Srtio3  Si(100)  Deposition  Silicon  Mocvd