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| Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays 期刊论文
Acs Applied Materials & Interfaces, 2014, 卷号: 6, 期号: 16, 页码: 14159-14166
作者: B. D. Liu; F. Yuan; B. Dierre; T. Sekiguchi; S. Zhang; Y. K. Xu; X. Jiang
  收藏 | 浏览/下载：134/0 | 提交时间：2015/01/14
Gan Nanowire Arrays Epitaxial Growth Interface Yellow-band Emission Vapor-phase Epitaxy Gallium Nitride Spatial-distribution Luminescence Carbon Cathodoluminescence Microstructure Nanodevices Fabrication Mechanism |
| Synthesis, Microstructure, and Cathodoluminescence of 0001 -Oriented GaN Nanorods Grown on Conductive Graphite Substrate 期刊论文
Acs Applied Materials & Interfaces, 2013, 卷号: 5, 期号: 22, 页码: 12066-12072
作者: F. Yuan; B. D. Liu; Z. E. Wang; B. Yang; Y. Yin; B. Dierre; T. Sekiguchi; G. F. Zhang; X. Jiang
收藏 | 浏览/下载：110/0 | 提交时间：2014/02/19
Gan Nanorods Graphite Crystallography Cathodoluminescence Vapor-phase Epitaxy Nanowire Arrays Piezoelectric Nanogenerators Yellow Luminescence Zinc-oxide Photoluminescence Nanostructures Deposition Mechanism Graphene |
| GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER 期刊论文
Surface Review and Letters, 2013, 卷号: 20, 期号: 2
作者: C. J. Dong; M. Xu; W. Lu; Q. Z. Huang
收藏 | 浏览/下载：108/0 | 提交时间：2013/12/24
Thin Films Nitrides Sputtering Microstructure Chemical-vapor-deposition Molecular-beam Epitaxy Optical-properties Lattice-constants Phase Epitaxy Wurtzite Inn Thin-films Layers Spectroscopy Nitridation |
| Wurtzite P-Doped GaN Triangular Microtubes as Field Emitters 期刊论文
Journal of Physical Chemistry C, 2010, 卷号: 114, 期号: 21, 页码: 9627-9633
作者: L. T. Fu; Z. G. Chen; D. W. Wang; L. N. Cheng; H. Y. Xu; J. Z. Liu; H. T. Cong; G. Q. Lu; J. Zou
Adobe PDF(2868Kb) | 收藏 | 浏览/下载：132/0 | 提交时间：2012/04/13
Gallium Nitride Nanowires Vapor-phase Epitaxy Emission Properties Optical-properties Carbon Nanotubes Cross-sections Growth Cathodoluminescence Nanorods Heterostructures |
| Growth of well-oriented Al(x)In(1-x)N films by sputtering at low temperature 期刊论文
Journal of Alloys and Compounds, 2009, 卷号: 479, 期号: 1-2, 页码: 812-815
作者: C. J. Dong; M. Xu; Q. Y. Chen; F. S. Liu; H. P. Zhou; Y. Wei; H. X. Ji
Adobe PDF(297Kb) | 收藏 | 浏览/下载：132/0 | 提交时间：2012/04/13
Al(x)In(1-x)n Film Magnetron Sputtering Crystallinity Resistance Molecular-beam Epitaxy Fundamental-band Gap Vapor-phase Epitaxy Optical-properties Energy Alinn Inn Aln Nanowires Inxal1-xn |
| Growth of GaN single crystals by Ca(3)N(2) flux 期刊论文
Scripta Materialia, 2008, 卷号: 58, 期号: 4, 页码: 319-322
作者: G. Wang; W. X. Yuan; J. K. Jian; H. Q. Bao; J. F. Wang; X. L. Chen; J. K. Liang
Adobe PDF(336Kb) | 收藏 | 浏览/下载：77/0 | 提交时间：2012/04/13
Calphad Single Crystal Growth Nitride Vapor-phase Epitaxy Iii-v Nitrides Bulk Gan Thermodynamic Assessment Na Flux Pressure Gallium System Mechanism Devices |
| Low-temperature synthesis and characterization of GaN nanocrystals from gallium trichloride precursor 期刊论文
Journal of Materials Research, 2004, 卷号: 19, 期号: 12, 页码: 3484-3489
作者: F. S. Liu; Q. L. Liu; J. K. Liang; G. B. Song; L. T. Yang; J. Luo; Y. Q. Zhou; H. W. Dong; G. H. Rao
收藏 | 浏览/下载：70/0 | 提交时间：2012/04/14
Chemical-vapor-deposition Single-crystalline Gan Raman-scattering Phase Epitaxy Thin-films Nitride Layers Nanowires Electron Nitrogen |
| C and Si ion implantation and the origins of yellow luminescence in GaN 期刊论文
Applied Physics a-Materials Science & Processing, 2004, 卷号: 79, 期号: 1, 页码: 139-142
作者: L. Dai; G. Z. Ran; J. C. Zhang; X. F. Duan; W. C. Lian; G. G. Qin
收藏 | 浏览/下载：105/0 | 提交时间：2012/04/14
Detected Magnetic-resonance Vapor-phase Epitaxy Undoped Gan Photoluminescence Vacancies Nitrides |
| Effects of Si ion implantation and post-annealing on yellow luminescence from GaN 期刊论文
Physica B-Condensed Matter, 2002, 卷号: 322, 期号: 1-2, 页码: 51-56
作者: L. Dai; J. C. Zhang; Y. Chen; G. Z. Ran; G. G. Qin
收藏 | 浏览/下载：74/0 | 提交时间：2012/04/14
Photoluminescence Yellow Luminescence Ion implantatIon Gan Detected Magnetic-resonance Vapor-phase Epitaxy Laser-diodes Undoped Gan Photoluminescence Vacancies Layers Origin |
