中文版 | English

在结果中检索

IMR OpenIR

浏览/检索结果: 共17条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文
CHINESE PHYSICS, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
作者:  Zhang, Y;  Zeng, YP;  Ma, L;  Wang, BQ;  Zhu, ZP;  Wang, LC;  Yang, FH
收藏  |  浏览/下载：75/0  |  提交时间：2021/02/02
resonant tunnelling diode  InP substrate  molecular beam epitaxy  high resolution transmission electron microscope  
Annealing ambient controlled deep defect formation in InP 期刊论文
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2004, 卷号: 27, 期号: 1-3, 页码: 167-169
作者:  Zhao, YW;  Dong, ZY;  Duan, ML;  Sun, WR;  Zeng, YP;  Sun, NF;  Sun, TN
收藏  |  浏览/下载：123/0  |  提交时间：2021/02/02
Deep level defects in high temperature annealed InP 期刊论文
SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE, 2004, 卷号: 47, 期号: 3, 页码: 320-326
作者:  Dong, ZY;  Zhao, YM;  Zeng, YP;  Duan, ML;  Lin, LY
收藏  |  浏览/下载：97/0  |  提交时间：2021/02/02
InP  defects  annealing ambience  
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
作者:  Dong, ZY;  Zhao, YW;  Zeng, YP;  Duan, ML;  Sun, WR;  Jiao, JH;  Lin, LY
收藏  |  浏览/下载：84/0  |  提交时间：2021/02/02
annealing  defects  etching  semiconducting indium phosphide  
Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
作者:  Dong, HW;  Zhao, YW;  Zeng, YP;  Jiao, JH;  Li, JM;  Lin, LY
收藏  |  浏览/下载：86/0  |  提交时间：2021/02/02
diffusion  interfaces  substrates  molecular beam epitaxy  phosphides  semiconducting indium phosphide  
Mode splitting in photoluminescence spectra of a quantum-dot-embedded microcavity 期刊论文
APPLIED PHYSICS LETTERS, 2003, 卷号: 82, 期号: 5, 页码: 665-667
作者:  Hu, CY;  Zheng, HZ;  Zhang, JD;  Zhang, H;  Yang, FH;  Zeng, YP
收藏  |  浏览/下载：67/0  |  提交时间：2021/02/02
Undoped semi-insulating indium phosphide (InP) and its applications 期刊论文
CHINESE SCIENCE BULLETIN, 2003, 卷号: 48, 期号: 4, 页码: 313-314
作者:  Dong, HW;  Zhao, YW;  Jiao, JH;  Zeng, YP;  Li, JM;  Lin, LY
收藏  |  浏览/下载：113/0  |  提交时间：2021/02/02
Increasing the photoluminescence intensity of Ge islands by chemical etching 期刊论文
CHINESE PHYSICS, 2001, 卷号: 10, 期号: 10, 页码: 966-969
作者:  Gao, F;  Huang, CJ;  Huang, DD;  Li, JP;  Kong, MY;  Zeng, YP;  Li, JM;  Lin, LY
收藏  |  浏览/下载：101/0  |  提交时间：2021/02/02
Ge islands  chemical etching  photoluminescence  Si2H6-Ge molecular beam epitaxy  
Increasing the photoluminescence intensity of Ge islands by chemical etching 期刊论文
CHINESE PHYSICS, 2001, 卷号: 10, 期号: 10, 页码: 966-969
作者:  Gao, F;  Huang, CJ;  Huang, DD;  Li, JP;  Kong, MY;  Zeng, YP;  Li, JM;  Lin, LY
收藏  |  浏览/下载：90/0  |  提交时间：2021/02/02
Ge islands  chemical etching  photoluminescence  Si2H6-Ge molecular beam epitaxy  
Changing the size and shape of Ge island by chemical etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 1-2, 页码: 17-21
作者:  Gao, F;  Huang, CJ;  Huang, DD;  Li, JP;  Sun, DZ;  Kong, MY;  Zeng, YP;  Li, JM;  Lin, LY
收藏  |  浏览/下载：90/0  |  提交时间：2021/02/02
atomic force microscopy  etching  nanostructures  molecular beam epitaxy  semiconducting germanium  semiconducting silicon